共 50 条
- [21] Effect of polarization field on intersubband transition in AlGaN/GaN quantum wells JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (4A): : L363 - L365
- [27] Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2662 - 2665
- [28] Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2394 - 2397
- [29] GaN/AIN multiple quantum wells and waveguide fabrication for ultrafast photonic devices utilizing intersubband transition TENCON 2004 - 2004 IEEE REGION 10 CONFERENCE, VOLS A-D, PROCEEDINGS: ANALOG AND DIGITAL TECHNIQUES IN ELECTRICAL ENGINEERING, 2004, : D140 - D143
- [30] Ultrafast intersubband relaxation dynamics and coherent nonlinearity in bulk and waveguide structures of GaNAIN multiple quantum wells PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 477 - +