Point defects introduced by InN alloying into InxGa 1-xN probed using a monoenergetic positron beam

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[1] Uedono, A.
[2] Tsutsui, T.
[3] Watanabe, T.
[4] Kimura, S.
[5] Zhang, Y.
[6] 2,Lozach, M.
[7] Sang, L.W.
[8] Ishibashi, S.
[9] Sumiya, M.
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Uedono, A. | 1600年 / American Institute of Physics Inc.卷 / 113期
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Electric fields;
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