Point defects introduced by InN alloying into InxGa 1-xN probed using a monoenergetic positron beam

被引：0
|
作者：
机构：
[1] Uedono, A.
[2] Tsutsui, T.
[3] Watanabe, T.
[4] Kimura, S.
[5] Zhang, Y.
[6] 2,Lozach, M.
[7] Sang, L.W.
[8] Ishibashi, S.
[9] Sumiya, M.
来源：
Uedono, A. | 1600年 / American Institute of Physics Inc.卷 / 113期
关键词：
Electric fields;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 47 条
  • [21] Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam
    Uedono, A
    Itoh, H
    Ohshima, T
    Aoki, Y
    Yoshikawa, M
    Nashiyama, I
    Okumura, H
    Yoshida, S
    Moriya, T
    Kawano, T
    Tanigawa, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12A): : 5986 - 5990
  • [22] Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam
    Uedono, Akira
    Kimura, Yasuki
    Hoshii, Takuya
    Kakushima, Kuniyuki
    Sumiya, Masatomo
    Tsukui, Masayuki
    Miyano, Kiyotaka
    Mizushima, Ichiro
    Yoda, Takashi
    Tsutsui, Kazuo
    JOURNAL OF APPLIED PHYSICS, 2023, 133 (22)
  • [23] Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam
    Uedono, Akira
    Takashima, Shinya
    Edo, Masaharu
    Ueno, Katsunori
    Matsuyama, Hideaki
    Kudo, Hiroshi
    Naramoto, Hiroshi
    Ishibashi, Shoji
    2016 16th International Workshop on Junction Technology (IWJT), 2016, : 35 - 38
  • [24] Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam
    Uedono, Akira
    Itoh, Hisayoshi
    Ohshima, Takeshi
    Aoki, Yasushi
    Yoshikawa, Masahito
    Nashiyama, Isamu
    Okumura, Hajime
    Yoshida, Sadafumi
    Moriya, Tsuyoshi
    Kawano, Takao
    Tanigawa, Shoichiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (12 A): : 5986 - 5990
  • [25] Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam
    Uedono, Akira
    Yoshihara, Nakaaki
    Zhang, Yuhao
    Sun, Min
    Piedra, Daniel
    Fujishima, Tatsuya
    Ishibashi, Shoji
    Sumiya, Masatomo
    Laboutin, Oleg
    Johnson, Wayne
    Palacios, Tomas
    APPLIED PHYSICS EXPRESS, 2014, 7 (12) : 121001
  • [26] Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam
    Uedono, A
    Koida, T
    Tsukazaki, A
    Kawasaki, M
    Chen, ZQ
    Chichibu, S
    Koinuma, H
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 2481 - 2485
  • [27] Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams
    Uedono, A
    Muramatsu, M
    Ubukata, T
    Tanino, H
    Tanigawa, S
    Nakano, A
    Yamamoto, H
    Suzuki, R
    Ohdaira, T
    Mikado, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (11): : 6126 - 6129
  • [28] Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams
    Uedono, Akira
    Muramatsu, Makoto
    Ubukata, Tomohiro
    Tanino, Hirotoshi
    Tanigawa, Shoichiro
    Nakano, Akihiko
    Yamamoto, Hidekazu
    Suzuki, Ryoichi
    Ohdaira, Toshiyuki
    Mikado, Tomohisa
    1600, JJAP, Tokyo (39):
  • [29] From extended defects and interfaces to point defects in three dimensions -: The case of InxGa1-xN
    Kisielowski, C.
    Bartel, T. P.
    Specht, P.
    Chen, F-R.
    Shubina, T. V.
    PHYSICA B-CONDENSED MATTER, 2007, 401 : 639 - 645
  • [30] THE DEPTH PROFILES OF ION-IMPLANTATION INDUCED VACANCY-TYPE DEFECTS PROBED BY A MONOENERGETIC POSITRON BEAM
    UEDONO, A
    WEJ, L
    TANIGAWA, S
    SUGIURA, J
    OGASAWARA, M
    TAMURA, M
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1992, 124 (01): : 31 - 41
12345