Point defects introduced by InN alloying into InxGa 1-xN probed using a monoenergetic positron beam

被引：0
|
作者：
机构：
[1] Uedono, A.
[2] Tsutsui, T.
[3] Watanabe, T.
[4] Kimura, S.
[5] Zhang, Y.
[6] 2,Lozach, M.
[7] Sang, L.W.
[8] Ishibashi, S.
[9] Sumiya, M.
来源：
Uedono, A. | 1600年 / American Institute of Physics Inc.卷 / 113期
关键词：
Electric fields;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 47 条
  • [11] DEFECTS IN SIO2/SI STRUCTURES PROBED BY USING A MONOENERGETIC POSITRON BEAM
    UEDONO, A
    WEI, L
    TANIGAWA, S
    OHJI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6A): : 3330 - 3334
  • [12] PLASMA-INDUCED DEFECTS IN GAAS PROBED BY A MONOENERGETIC POSITRON BEAM
    UEDONO, A
    WEI, L
    KAWANO, T
    TANIGAWA, S
    WADA, K
    NAKANISHI, H
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C1): : 87 - 90
  • [13] Point defects in thin HfAIOx films probed by monoenergetic positron beams
    Uedono, A
    Mitsuhashi, R
    Horiuchi, A
    Torii, K
    Yamabe, K
    Yamada, K
    Suzuki, R
    Ohdaira, T
    Mikado, T
    FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 2004, 786 : 43 - 48
  • [14] Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam
    Uedono, A. (uedono@ims.tsukuba.ac.jp), 1600, American Institute of Physics Inc. (95):
  • [15] Defects in Eu- and Tb-doped GaN probed using a monoenergetic positron beam
    Uedono, A
    Bang, H
    Horibe, K
    Morishima, S
    Akimoto, K
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) : 5181 - 5184
  • [16] Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam
    Uedono, A
    Suzuki, T
    Nakamura, T
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) : 913 - 918
  • [17] Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam
    Uedono, A
    Kiyohara, M
    Shimoyama, K
    Matsunaga, Y
    Yasui, N
    Yamabe, K
    POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 2004, 445-6 : 201 - 203
  • [18] Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam
    Uedono, Akira
    Siladie, Alexandra-Madalina
    Pernot, Julien
    Daudin, Bruno
    Ishibashi, Shoji
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (17)
  • [19] Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam
    Uedono, Akira
    Fujishima, Tatsuya
    Cao, Yu
    Joglekar, Sameer
    Piedra, Daniel
    Lee, Hyung-Seok
    Zhang, Yuhao
    Zhang, Yang
    Yoshihara, Nakaaki
    Ishibashi, Shoji
    Sumiya, Masatomo
    Laboutin, Oleg
    Johnson, Wayne
    Palacios, Tomas
    2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2014, : 73 - 77
  • [20] Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams
    Uedono, A
    Chichibu, SF
    Higashiwaki, M
    Matsui, T
    Ohdaira, T
    Suzuki, R
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)
12345