Investigation of sensitivity of two-dimensional integrated magnetic sensor fabricated in sub-micron CMOS process

被引：2
|
作者：
Kimura T. [1 ]
Furuya H. [2 ]
Masuzawa T. [1 ]
机构：
[1] Faculty of Engineering, Ibaraki University, Hitachi-shi, Ibaraki 316-8511, 4-12-1, Nakanarusawa-cho
[2] Graduate School of Science and Engineering, Ibaraki University, Hitachi-shi, Ibaraki 316-8511, 4-12-1, Nakanarusawa-cho
来源：
Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers | 2011年 / 65卷 / 03期
关键词：
D O I：
10.3169/itej.65.364
中图分类号：
学科分类号：
摘要：
To realize a high-resolution two-dimensional integrated magnetic sensor, the process rule was changed from 0.35 to 0.18 /im. The fabricated magnetic sensor was an n-type Hall sensor that uses an inversion layer under the gate oxide of the MOSFET. The decided sensor area size was 6.6 × 6.6νm 2. The Hall sensors were arrayed in 32×32 pixels. The average sensitivity of the fabricated magnetic sensors was 34.6mV/(mAT), and this value was the same as that of fabricated magnetic sensors in the 0.35μm standard CMOS process. No degradation of sensitivity was introduced to a magnetic sensor fabricated in 0.18 μm process rule. From the result of two-dimensional integrated magnetic sensor, two-dimensional magnetic flux distribution was successfully measured from the 1-mm diameter Nd-Fe-B rare-earth permanent magnet. By changing the position of the probe that measures Hall voltage, the sensitivity of magnetic sensors was increased by 17%.
引用
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页码：364 / 366
页数：2
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