共 50 条
- [21] Volume distribution of InAs/GaAs self-assembled quantum dots [J]. COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 445 - 450
- [22] Photoluminescence and time-resolved photoluminescence studies of self-assembled InAs quantum dots [J]. MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, 2002, 722 : 223 - 228
- [23] Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs/GaAs quantum well [J]. Bandaoti Guangdian/Semiconductor Optoelectronics, 2007, 28 (02): : 198 - 201
- [26] Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs/GaAs quantum well [J]. Journal of Applied Physics, 2007, 101 (12):
- [27] Line broadening of photoluminescence excitation resonances in single self-assembled quantum dots [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (12B): : L1464 - L1466
- [28] Anti-stokes photoluminescence in self-assembled InAs/GaAs quantum dots [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2002, 190 (02): : 505 - 509
- [29] Time-resolved photoluminescence in annealed self-assembled InAs quantum dots [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12, 2006, 3 (12): : 4299 - 4302