Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs/GaAs quantum well

被引:0
|
作者
Kong, Lingmin [1 ]
Wu, Zhengyun [2 ]
Feng, Zhe Chuan [3 ]
Ferguson, Ian T. [4 ]
机构
[1] Department of Physics, Zhejiang Ocean University, Zhoushan 316000, China
[2] Department of Physics, Xiamen University, Xiamen 361005, China
[3] Graduate Institute of Electro-Optical Engineering, National Taiwan University, Department of Electrical Engineering, Taipei 106-17, Taiwan
[4] School of Electrical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States
来源
Journal of Applied Physics | 2007年 / 101卷 / 12期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs/GaAs quantum well
    Kong, Ling-Min
    Yao, Jian-Ming
    Wu, Zheng-Yun
    [J]. Bandaoti Guangdian/Semiconductor Optoelectronics, 2007, 28 (02): : 198 - 201
  • [2] Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs/GaAs quantum well
    Kong, Lingmin
    Wu, Zhengyun
    Feng, Zhe Chuan
    Ferguson, Ian T.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
  • [3] Photoluminescence studies of self-assembled InAs quantum dots formed on InGaAs/GaAs quantum well
    Mu, X
    Ding, YJ
    Wang, Z
    Salamo, GJ
    [J]. LASER PHYSICS LETTERS, 2005, 2 (11) : 538 - 543
  • [4] MBE growth and characteristics of self-assembled InAs/InGaAs/GaAs quantum dots
    Park, C. Y.
    Kim, J. M.
    Lee, Y. T.
    [J]. 2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS, 2006, : 304 - +
  • [5] Photoluminescence characteristics of InAs self-assembled quantum dots capped with InGaAs and InAlAs layers
    Kong, Ling-Min
    Yao, Jian-Ming
    Wu, Zheng-Yun
    [J]. Bandaoti Guangdian/Semiconductor Optoelectronics, 2008, 29 (03): : 349 - 352
  • [6] Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well
    Tatebayashi, J.
    Khoshakhlagh, A.
    Huang, S. H.
    Balakrishnan, G.
    Dawson, L. R.
    Huffaker, D. L.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (26)
  • [7] Effects of GaAs on photoluminescence properties of self-assembled InAs quantum dots
    Wang, XQ
    Zhang, YJ
    Du, GT
    Li, XJ
    Yin, JZ
    Chen, WY
    Yang, SR
    [J]. CHINESE PHYSICS LETTERS, 2001, 18 (04) : 579 - 581
  • [8] Mindinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots
    Sauvage, S
    Boucaud, P
    Brunhes, T
    Lemaître, A
    Gérard, JM
    [J]. PHYSICAL REVIEW B, 1999, 60 (23) : 15589 - 15592
  • [9] Photoluminescence linewidth narrowing of InAs/GaAs self-assembled quantum dots
    Kiravittaya, S
    Nakamura, Y
    Schmidt, OG
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 224 - 228
  • [10] Gain characteristics of self-assembled InAs/GaAs quantum dots
    Arzberger, M
    Böhm, G
    Amann, MC
    Abstreiter, G
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (03): : 827 - 831