MBE growth and characteristics of self-assembled InAs/InGaAs/GaAs quantum dots

被引：0
|
作者：
Park, C. Y. [1 ]
Kim, J. M. [1 ]
Lee, Y. T. [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Informat & Commun, 1 Oryong Dong, Kwangju 500712, South Korea
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-assembled InAs QDs was grown on (001) GaAs substrate by MBE. The dot density was 5.2x10(10)/cm(2), the height was 14nm and the width was 30nm. The peak-wavelength and the FWHM were 1266nm and 41.23meV respectively.
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页码：304 / +
页数：2
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