Effects of spectral characteristics of backlight sources on photo-leakage currents of hydrogenated amorphous silicon thin film transistor

被引：0

作者：

Hong, Sung Jae ^{[1
]}

Kwon, Sang Jik ^{[1
]}

Cho, Eou Sik ^{[1
]}

机构：

[1] Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam, Kyunggi 461-701, Korea, Republic of

来源：

Japanese Journal of Applied Physics | 2008年 / 47卷 / 8 PART 3期

关键词：

For various light sources used as backlight systems such as a cold cathode fluorescent lamp (CCFL) or a white light-emitting diode (LED); the photo-leakage characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) were analyzed and described in terms of the relationship between the spectral characteristics of light sources and the mechanism for the generation of electron-hole pairs. From the spectral analysis of the light sources; the leakage current is thought to be related to the wavelength of the peak intensity because the absorption coefficient of the a-Si:H layer is inversely proportional to the wavelength. In the case of a higher wavelength of peak intensity; the photo-leakage characteristics showed improvements in the leakage level and in the on/off current ratio despite similar luminance. © 2008 The Japan Society of Applied Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：6974 / 6977

共 50 条

[21] Temperature dependent transient leakage currents in amorphous silicon thin film transistors
Lemmi, F.
Street, R.A.
Materials Research Society Symposium - Proceedings, 1999, 557 : 671 - 676
[22] Low off-state leakage current thin-film transistor using Cl incorporated hydrogenated amorphous silicon
Lee, KS
Choi, JH
Kim, SK
Jeon, HB
Jang, J
APPLIED PHYSICS LETTERS, 1996, 69 (16) : 2403 - 2405
[23] Nonvolatile hydrogenated-amorphous-silicon thin-film-transistor memory devices
Kuo, Yue
Nominanda, Helinda
APPLIED PHYSICS LETTERS, 2006, 89 (17)
[24] Hydrogenated amorphous silicon thin-film transistor on plastic with an organic gate insulator
Won, SH
Hur, JH
Lee, CB
Nam, HC
Chung, JK
Jang, J
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (03) : 132 - 134
[25] Performance Comparison of Amorphous-IGZO and Hydrogenated Silicon Based Thin Film Transistor
Dargar, Shashi K.
Srivastava, Viranjay M.
2018 INTERNATIONAL CONFERENCE ON ADVANCED COMPUTATION AND TELECOMMUNICATION (ICACAT), 2018,
[26] Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography
Wong, WS
Ready, SE
Lu, JP
Street, RA
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (09) : 577 - 579
[27] An analytical capacitance model for a hydrogenated amorphous silicon based thin-film transistor
Hafdi, Z.
SEVENTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCES, 2011, 21
[28] Characterization of photo leakage current of amorphous silicon thin-film transistors
Yamaji, Yoshimi
Ikeda, Mitsushi
Akiyama, Masahiko
Endo, Takahiko
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (11): : 6202 - 6206
[29] Characterization of photo leakage current of amorphous silicon thin-film transistors
Yamaji, Y
Ikeda, M
Akiyama, M
Endo, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (11): : 6202 - 6206
[30] High-rate deposited amorphous silicon nitride for the hydrogenated amorphous silicon thin-film transistor structures
Li, T
Chen, CY
Malone, CT
Kanicki, J
FLAT PANEL DISPLAY MATERIALS II, 1997, 424 : 43 - 51

← 1 2 3 4 5 →