Effects of spectral characteristics of backlight sources on photo-leakage currents of hydrogenated amorphous silicon thin film transistor

被引：0

作者：

Hong, Sung Jae ^{[1
]}

Kwon, Sang Jik ^{[1
]}

Cho, Eou Sik ^{[1
]}

机构：

[1] Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam, Kyunggi 461-701, Korea, Republic of

来源：

Japanese Journal of Applied Physics | 2008年 / 47卷 / 8 PART 3期

关键词：

For various light sources used as backlight systems such as a cold cathode fluorescent lamp (CCFL) or a white light-emitting diode (LED); the photo-leakage characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) were analyzed and described in terms of the relationship between the spectral characteristics of light sources and the mechanism for the generation of electron-hole pairs. From the spectral analysis of the light sources; the leakage current is thought to be related to the wavelength of the peak intensity because the absorption coefficient of the a-Si:H layer is inversely proportional to the wavelength. In the case of a higher wavelength of peak intensity; the photo-leakage characteristics showed improvements in the leakage level and in the on/off current ratio despite similar luminance. © 2008 The Japan Society of Applied Physics;

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中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：6974 / 6977

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