Temperature dependent transient leakage currents in amorphous silicon thin film transistors

被引：0
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作者：
Lemmi, F. [1 ]
Street, R.A. [1 ]
机构：
[1] Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, United States
来源：
Materials Research Society Symposium - Proceedings | 1999年 / 557卷
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页码：671 / 676
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