Influence of etching on the luminescence characteristic of strained InAsP/InGaAsP multiple quantum wells

被引：0
|
作者：
Cao, Meng [1 ,2 ]
Wu, Huizhen [1 ]
Lao, Yanfeng [1 ,2 ]
Liu, Cheng [1 ,2 ]
Xie, Zhengsheng [1 ,2 ]
Cao, Chunfang [1 ,2 ]
机构：
[1] Stale Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
[2] Graduate School, Chinese Academy of Sciences, Beijing 100039, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / SUPPL.期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：467 / 470
相关论文
共 50 条
  • [41] Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells
    Aït-Ouali, A
    Brebner, JL
    Yip, RYF
    Masut, RA
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) : 6803 - 6809
  • [42] Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells
    J Appl Phys, 12 (6803):
  • [43] Optical property of InAsP/InP strained quantum wells grown on InP (111)B and (100) substrates
    Hou, H.Q., 1600, American Inst of Physics, Woodbury, NY, United States (75):
  • [44] Quantum confinement effects in strained SiGe/Si multiple quantum wells
    Cheng, Buwen
    Li, Daizong
    Huang, Changjun
    Zhang, Chunhui
    Yu, Zhuo
    Yu, Jinzhong
    Wang, Qiming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (04): : 313 - 316
  • [45] Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells
    Yu Zhi-Guo
    Chen Peng
    Yang Guo-Feng
    Liu Bin
    Xie Zi-Li
    Xiu Xiang-Qian
    Wu Zhen-Long
    Xu Feng
    Xu Zhou
    Hua Xue-Mei
    Han Ping
    Shi Yi
    Zhang Rong
    Zheng You-Dou
    CHINESE PHYSICS LETTERS, 2012, 29 (07)
  • [46] Interfaces of InAsP/InP multiple quantum wells grown by metalorganic vapour phase epitaxy
    Tran, C.A.
    Graham, J.T.
    Brebner, J.L.
    Journal of Electronic Materials, 1994, 23 (12): : 1291 - 1296
  • [47] LOW SPECTRAL CHIRP AND LARGE ELECTROABSORPTION IN A STRAINED INGAASP/INGAASP MULTIPLE-QUANTUM-WELL MODULATOR
    LANGANAY, J
    STARCK, C
    BOULOU, M
    NICOLARDOT, M
    EMERY, JY
    FORTIN, C
    AUBERT, P
    LESTERLIN, D
    APPLIED PHYSICS LETTERS, 1993, 62 (17) : 2066 - 2068
  • [48] Semiconductor Optical Amplifiers based on strained multiple quantum wells
    Rigo, C
    Campi, D
    Fornuto, G
    Cacciatore, C
    Stano, A
    Coriasso, C
    Re, D
    Vallone, M
    Soldani, D
    De Franceschi, R
    Ghiglieno, F
    LATTICE MISMATCHED THIN FILMS, 1999, : 169 - 174
  • [49] Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells
    Héroux, JB
    Yang, X
    Wang, WI
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4361 - 4366
  • [50] Optical characterization of strained InGaAsN/GaAs multiple quantum wells
    Héroux, JB
    Yang, X
    Wang, WI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (03): : 1154 - 1157
12345