Influence of etching on the luminescence characteristic of strained InAsP/InGaAsP multiple quantum wells

被引：0
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作者：
Cao, Meng [1 ,2 ]
Wu, Huizhen [1 ]
Lao, Yanfeng [1 ,2 ]
Liu, Cheng [1 ,2 ]
Xie, Zhengsheng [1 ,2 ]
Cao, Chunfang [1 ,2 ]
机构：
[1] Stale Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
[2] Graduate School, Chinese Academy of Sciences, Beijing 100039, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / SUPPL.期
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页码：467 / 470
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