CATION INTERDIFFUSION IN INGAASP/INGAASP MULTIPLE-QUANTUM WELLS WITH CONSTANT P/AS RATIO

被引：14
|
作者：
HAMOUDI, A
OUGAZZADEN, A
KRAUZ, P
RAO, EVK
JUHEL, M
THIBIERGE, H
机构：
[1] France Telecom/CNET/PAB, Laboratoire de Bagneaux, 92220 Bagneux
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期
关键词：
D O I：
10.1063/1.114110
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
On quaternary/quaternary multiple quantum wells, with constant P/As ratio and In-rich wells, we show the possibility of producing a blueshift of the heavy hole exciton line with interdiffusing only group III atoms, similarly to GaAs/GaAlAs and InGaAs/GaAs systems. This kind of structure, particularly suitable for group III diffusion study, has allowed us to obtain a quantitative value of the In-Ga interdiffusion coefficient at 850°C: DIn-Ga≈4.72×10-16 cm2 s-1.© 1995 American Institute of Physics.
引用
收藏
页码：718 / 720
页数：3
相关论文
共 50 条
  • [1] MODELING OF EXCITONIC ELECTROREFRACTION IN INGAASP MULTIPLE-QUANTUM WELLS
    BANDYOPADHYAY, A
    BASU, PK
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (11) : 2724 - 2730
  • [2] PHOTOVOLTAIC SPECTROSCOPY OF INGAASP/INP MULTIPLE-QUANTUM WELLS
    DEMERDJIEV, P
    FORTIN, E
    ROTH, AP
    SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (03) : 291 - 296
  • [3] EXCITON SATURATION AND FIELD SCREENING IN INGAAS/INGAASP MULTIPLE-QUANTUM WELLS
    TUTKEN, T
    HAWDON, BJ
    SCHEUBLE, E
    ZIMMERMANN, M
    KONIG, P
    HANGLEITER, A
    HARLE, V
    SCHOLZ, F
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 257 - 260
  • [4] COMPOSITION ANALYSIS AND DISTRIBUTED-FEEDBACK LASERS OF STRAINED INGAASP QUANTUM-WELLS WITH CONSTANT AS/P RATIO
    KUPHAL, E
    BURKHARD, H
    POCKER, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (7A): : 3486 - 3490
  • [5] In-well diffusion in InGaAsP multiple quantum wells
    Marshall, Dawn
    Ebrahimzadeh, Majid
    Miller, Alan
    Button, Chris
    Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 2000,
  • [6] PHOTOLUMINESCENCE AND INTERFACE ABRUPTNESS IN INGAASP/INGAASP QUANTUM-WELLS
    WOODS, LM
    SILVESTRE, P
    THIAGARAJAN, P
    PATRIZI, GA
    ROBINSON, GY
    JONES, KM
    ALJASSIM, M
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (11) : 1229 - 1233
  • [7] Investigations of interdiffusion in InGaAsP multiple-quantum-well structures by photoreflectance
    Lin, D. Y.
    Lin, W. C.
    Wu, F. L.
    Wu, J. S.
    Pan, Y. T.
    Lee, S. L.
    Huang, Y. S.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (05): : 791 - 795
  • [8] Optical beam steering using InGaAsP multiple quantum wells
    May-Arrioja, DA
    Bickel, N
    LiKamWa, P
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (02) : 333 - 335
  • [9] IMPROVED MODULATOR CHARACTERISTICS USING TENSILE STRAIN IN LONG-WAVELENGTH INGAAS/INGAASP MULTIPLE-QUANTUM WELLS
    TUTKEN, T
    HAWDON, BJ
    ZIMMERMANN, M
    QUEISSER, I
    HANGLEITER, A
    HARLE, V
    SCHOLZ, F
    APPLIED PHYSICS LETTERS, 1994, 64 (04) : 403 - 404
  • [10] Photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity
    Grac, R
    Pugnet, M
    Collet, JH
    Lambert, B
    De Matos, C
    L'Haridon, H
    Le Corre, A
    White, JO
    SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (04) : 505 - 509
12345