共 50 条
- [41] Intraband light absorption by holes in InGaAsP/InP quantum wells INTERNATIONAL CONFERENCE PHYSICA.SPB/2017, 2018, 1038
- [43] Intraband light absorption by holes in InGaAsP/InP quantum wells 19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2018, 993
- [44] MODIFICATION OF LAYER INTERDIFFUSION IN GAINAS/GAINASP MULTIPLE-QUANTUM WELLS THROUGH THE CONTROLLED INTRODUCTION OF DISLOCATIONS MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 477 - 480
- [46] EVALUATION OF EXCITON ABSORPTION PEAK BROADENING FACTORS IN INGAASP/INP MULTIPLE QUANTUM-WELLS GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 309 - 312
- [48] EVALUATION OF EXCITON ABSORPTION PEAK BROADENING FACTORS IN INGAASP/INP MULTIPLE QUANTUM-WELLS INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 309 - 312
- [49] Study of InGaAsP/InP multiple quantum wells grown by solid source molecular beam epitaxy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1940 - 1944