Quantum confinement effects in strained SiGe/Si multiple quantum wells

被引：0
|
作者：
Cheng, Buwen [1 ]
Li, Daizong [1 ]
Huang, Changjun [1 ]
Zhang, Chunhui [1 ]
Yu, Zhuo [1 ]
Yu, Jinzhong [1 ]
Wang, Qiming [1 ]
机构：
[1] Inst of Semiconductors, Chinese Acad of Sciences, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 04期
关键词：
Band effect mass model - Confinement energy - Multiple quantum wells - Quantum confinement effect;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：313 / 316
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