Quantum confinement effects in strained SiGe/Si multiple quantum wells

被引：0
|
作者：
Cheng, Buwen [1 ]
Li, Daizong [1 ]
Huang, Changjun [1 ]
Zhang, Chunhui [1 ]
Yu, Zhuo [1 ]
Yu, Jinzhong [1 ]
Wang, Qiming [1 ]
机构：
[1] Inst of Semiconductors, Chinese Acad of Sciences, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 04期
关键词：
Band effect mass model - Confinement energy - Multiple quantum wells - Quantum confinement effect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：313 / 316
相关论文
共 50 条
  • [41] BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)
    NAYAK, DK
    USAMI, N
    FUKATSU, S
    SHIRAKI, Y
    APPLIED PHYSICS LETTERS, 1993, 63 (25) : 3509 - 3511
  • [42] BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100)
    NAYAK, DK
    USAMI, N
    SUNAMURA, H
    FUKATSU, S
    SHIRAKI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10A): : L1391 - L1393
  • [43] EVIDENCE FOR QUANTUM CONFINEMENT IN THE PHOTOLUMINESCENCE OF POROUS SI AND SIGE
    GARDELIS, S
    RIMMER, JS
    DAWSON, P
    HAMILTON, B
    KUBIAK, RA
    WHALL, TE
    PARKER, EHC
    APPLIED PHYSICS LETTERS, 1991, 59 (17) : 2118 - 2120
  • [44] Fabrication of crack-free strained SiGe/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method
    Kanesawa, R.
    Kikuoka, S.
    Shibahara, Y.
    Wagatsuma, Y.
    Yamada, M.
    Hamaya, K.
    Sawano, K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 177
  • [45] SI/SIGE QUANTUM-WELLS - FUNDAMENTALS TO TECHNOLOGY
    ISMAIL, K
    MEYERSON, BS
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1995, 6 (05) : 306 - 310
  • [46] Mechanism of terahertz lasing in SiGe/Si quantum wells
    Blom, A
    Odnoblyudov, MA
    Cheng, HH
    Yassievich, IN
    Chao, KA
    APPLIED PHYSICS LETTERS, 2001, 79 (06) : 713 - 715
  • [47] Erratum to: Plasma Excitations in SiGe/Si Quantum Wells
    A. R. Khisameeva
    A. V. Shchepetilnikov
    G. A. Nikolaev
    S. A. Lopatina
    Ya. V. Fedotova
    I. V. Kukushkin
    JETP Letters, 2023, 118 : 230 - 230
  • [48] Spin coherence and manipulation in Si/SiGe quantum wells
    Jantsch, W
    Wilamowski, Z
    FRONTIERS OF MULTIFUNCTIONAL INTEGRATED NANOSYSTEMS, 2004, 152 : 379 - 390
  • [49] Key scattering mechanisms for holes in strained SiGe/Ge/SiGe square quantum wells
    Doan Nhat Quang
    Nguyen Huyen Tung
    Do Thi Hien
    Tran Thi Hai
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (11)
  • [50] Type-II SiGe/Si multiple quantum wells grown on relaxed SiGe virtual substrate
    Li, D.-Z., 2001, Science Press (22):
12345