Electrostatic discharge protection of low-voltage circuits by forward characteristics of wide bandgap semiconductor Schottky barrier diodes

被引：0

作者：

Tsujimoto, Yoshimasa ^{[1
]}

Tojo, Takatoshi ^{[1
]}

Tsukamoto, Naoyuki ^{[1
]}

机构：

[1] Engineering, Ceramic Materials & Devices, Otowa Electric Co., Ltd., Hyogo, Sanda,669-1313, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1600年 / 63卷 / 12期

关键词：

Schottky barrier diodes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 32 条

[1] Electrostatic discharge protection of low-voltage circuits by forward characteristics of wide bandgap semiconductor Schottky barrier diodes
Tsujimoto, Yoshimasa
Tojo, Takatoshi
Tsukamoto, Naoyuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (12)
[2] Temperature characteristics of Schottky barrier diodes for low-voltage sensing applications
Li, Yiran
Lu, Li
Block, S. T.
Li, Changzhi
ELECTRONICS LETTERS, 2012, 48 (07) : 406 - U149
[3] Optimization of the parameters of low-voltage rectifier Schottky-barrier diodes
Kyuregyan, A.S.
Soviet journal of communications technology & electronics, 1988, 33 (11): : 49 - 54
[4] OPTIMUM PARAMETERS FOR LOW-VOLTAGE POWER DIODES WITH SCHOTTKY-BARRIER
KYUREGYAN, AS
RADIOTEKHNIKA I ELEKTRONIKA, 1988, 33 (06): : 1302 - 1306
[5] FREQUENCY-DEPENDENCE OF FORWARD CAPACITANCE VOLTAGE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES
CHATTOPADHYAY, P
RAYCHAUDHURI, B
SOLID-STATE ELECTRONICS, 1993, 36 (04) : 605 - 610
[6] Punch-through diodes as replacement for low-voltage Zener diodes in ESD protection circuits
van Dalen, R
Koops, GEJ
Pfennigstorf, O
JOURNAL OF ELECTROSTATICS, 2004, 61 (3-4) : 149 - 169
[7] EFFECT OF CARRIER CONCENTRATION IN THE SEMICONDUCTOR ON THE VOLTAGE-CURRENT CHARACTERISTICS OF SCHOTTKY BARRIER DIODES AT LOW TEMPERATURES.
Bozhkov, V.G.
Malakhovskii, O.Yu.
1600, (29):
[8] The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes
Liu Yu-Dong
Du Lei
Sun Peng
Chen Wen-Hao
ACTA PHYSICA SINICA, 2012, 61 (13)
[9] EFFECT OF CHARGE CARRIER CONCENTRATION IN A SEMICONDUCTOR ON VOLTAGE-CURRENT CHARACTERISTICS OF DIODES WITH SCHOTTKY-BARRIER AT LOW-TEMPERATURE
BOZHKOV, VG
MALAKHOVSKII, OY
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1986, 29 (10): : 87 - 93
[10] ON THE DISTORTION OF LOW-TEMPERATURE CURRENT-VOLTAGE CHARACTERISTICS OF DIODES WITH SCHOTTKY-BARRIER
BOZHKOV, VG
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1987, 30 (02): : 29 - 32

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