Electrostatic discharge protection of low-voltage circuits by forward characteristics of wide bandgap semiconductor Schottky barrier diodes

被引：0
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作者：
Tsujimoto, Yoshimasa [1 ]
Tojo, Takatoshi [1 ]
Tsukamoto, Naoyuki [1 ]
机构：
[1] Engineering, Ceramic Materials & Devices, Otowa Electric Co., Ltd., Hyogo, Sanda,669-1313, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1600年 / 63卷 / 12期
关键词：
Schottky barrier diodes;
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