An analytic current-voltage equation for top-contact organic thin film transistors including the effects of variable series resistance

被引：0

作者：

Jung, Keum-Dong ^{[1
]}

Kim, Yoo Chul ^{[1
]}

Kim, Byeong-Ju ^{[1
]}

Park, Byung-Gook ^{[1
]}

Shin, Hyungcheol ^{[1
]}

Lee, Jong Duk ^{[1
]}

机构：

[1] Inter-University Semiconductor Research Center (ISRC), School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea, Republic of

来源：

Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 2期

关键词：

An analytic current-voltage (I-V) equation for top-contact organic thin film transistors (OTFTs) is derived by analyzing the channel and the overlap region separately. From the analysis on the overlap region; the series resistance of OTFTs is found to be a function of the gate voltage due to the sheet resistance change of the accumulation layer. Using the derived I-V equation; the characteristics of both the channel and the overlap region are well-explained. The I-V equation is verified with fabricated top-contact OTFTs and metal-insulator-semiconductor (MIS) capacitors; and the predicted I-V characteristics from the equation agree well with the measurements. Also; the ratio of the series resistance to the total resistance of the device is up to 60% which shows significant influence of the series resistance on top-contact OTFT performance. © 2008 The Japan Society of Applied Physics;

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学科分类号：

摘要：

Journal article (JA)

引用

页码：3174 / 3178

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