An analytic current-voltage equation for top-contact organic thin film transistors including the effects of variable series resistance

被引：0
|
作者：
Jung, Keum-Dong [1 ]
Kim, Yoo Chul [1 ]
Kim, Byeong-Ju [1 ]
Park, Byung-Gook [1 ]
Shin, Hyungcheol [1 ]
Lee, Jong Duk [1 ]
机构：
[1] Inter-University Semiconductor Research Center (ISRC), School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 2期
关键词：
An analytic current-voltage (I-V) equation for top-contact organic thin film transistors (OTFTs) is derived by analyzing the channel and the overlap region separately. From the analysis on the overlap region; the series resistance of OTFTs is found to be a function of the gate voltage due to the sheet resistance change of the accumulation layer. Using the derived I-V equation; the characteristics of both the channel and the overlap region are well-explained. The I-V equation is verified with fabricated top-contact OTFTs and metal-insulator-semiconductor (MIS) capacitors; and the predicted I-V characteristics from the equation agree well with the measurements. Also; the ratio of the series resistance to the total resistance of the device is up to 60% which shows significant influence of the series resistance on top-contact OTFT performance. © 2008 The Japan Society of Applied Physics;
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页码：3174 / 3178
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