Simultaneous measurements of drain-to-source current and carrier injection properties of top-contact pentacene thin-film transistors

被引：11

作者：

Majima, Yutaka ^{[1
]}

Kawakami, Daisuke ^{[1
]}

Suzuki, Seiichi ^{[1
]}

Yasutake, Yuhsuke ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 01期

关键词：

organic thin film transistor; carrier injection; channel current; displacement current; pentacene;

D O I：

10.1143/JJAP.46.390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Drain-to-source current [I-DS = (I-D - I-S)/2] and displacement current (1(dis) = I-S + I-D) are evaluated using the simultaneous measurements of source (I-S) and drain (I-D) currents during the application of a constant drain voltage and a triangular-wave gate voltage (V-GS) to top-contact pentacene thin-film transistors. The carrier mobility, threshold voltages and mean potential drops at the source/channel and channel/drain interface are simultaneously obtained from I-DS-V-GS and I-dis-V-GS relationships. Carrier injection properties, namely, the carrier injection voltage at the source electrode and the mean potential drop-V-GS relathionship are discussed on the basis of results of the simultaneous measurements of I-DS and I-dis.

引用

页码：390 / 393

页数：4

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