Surface recombination in organic solar cells: Intrinsic vs. doped active layer

被引：0

作者：

Akhtanova, Gulnur ^{[1
]}

Parkhomenko, Hryhorii P. ^{[1
]}

Vollbrecht, Joachim ^{[2
]}

Mostovyi, Andrii I. ^{[1
,2
]}

Schopp, Nora ^{[3
]}

Brus, Viktor ^{[1
]}

机构：

[1] Nazarbayev Univ, Sch Sci & Humanities, Dept Phys, Astana 010000, Kazakhstan

[2] Inst Solar Energy Res Hamelin, Dept Photovolta, D-31860 Emmerthal, Germany

[3] First Solar Inc, 28101 Cedar Pk Blvd, Perrysburg, OH 43551 USA

来源：

ORGANIC ELECTRONICS | 2025年 / 137卷

关键词：

Non-fullerene acceptors; Non-geminate recombination; Surface recombination; Organic bulk heterojunction solar cells; MOTT-SCHOTTKY ANALYSIS; BULK;

D O I：

10.1016/j.orgel.2024.107183

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study extends the analytical model of surface recombination in organic solar cells with an intrinsic active bulk-heterojunction layer. The key finding of the developed multi-mechanism recombination model accounting for the intrinsic active layer is that the slope of V OC vs. ln(Light Intensity) cannot be lower than 1.0 kT/q even at the extremely high concentrations of surface traps. We revealed the difference in recombination-related parameters determined in the scope of the multi-mechanism recombination model for the doped or intrinsic active layer and highlighted the importance of identifying the doping level of the active layer material. This is demonstrated by a synergy of comprehensive simulation and experimental analysis of organic solar cells with donor: acceptor blends: (PM6:Y6, PTB7-Th:COTIC-4F, PTB7-Th:O-IDTBR and PTB7-Th:ITIC-4F).

引用

页数：10

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