Fabrication and resistivity of ZnO:Al thin films prepared by DC magnetron sputtering at room temperature

被引:0
|
作者
Ren, Mingfang [1 ]
Wang, Hua [1 ]
Xu, Jiwen [1 ]
Yang, Ling [1 ]
机构
[1] Dept. of Information Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
9
引用
收藏
页码:344 / 347
相关论文
共 50 条
  • [31] Microstructural and optical properties of ZnO/(Ni) thin films prepared by DC magnetron sputtering
    Gao, Fei
    Tan, Li Xin
    Wu, Zai Hua
    Liu, Xiao Yan
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 484 (1-2) : 489 - 493
  • [32] OPTICAL-PROPERTIES OF ZNO - AL FILMS PREPARED BY REACTIVE DC MAGNETRON SPUTTERING
    GHOSH, S
    SARKAR, A
    CHAUDHURI, S
    PAL, AK
    VACUUM, 1991, 42 (10-11) : 645 - 648
  • [33] Physical properties of metal-doped ZnO thin films prepared by RF magnetron sputtering at room temperature
    Mahdhi, Hayet
    Ben Ayadi, Z.
    Djessas, K.
    JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2019, 23 (12) : 3217 - 3224
  • [34] Physical properties of metal-doped ZnO thin films prepared by RF magnetron sputtering at room temperature
    Hayet Mahdhi
    Z. Ben Ayadi
    K. Djessas
    Journal of Solid State Electrochemistry, 2019, 23 : 3217 - 3224
  • [35] Gas sensing properties of ZnO:Al thin films prepared by RF magnetron sputtering
    Teoh, Lay Gaik
    Chen, Hong Ming
    Su, Yen Hsun
    Lai, Wei Hao
    Chou, Shih Min
    Hon, Min Hsiung
    2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 142 - +
  • [36] Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering
    Ko, H
    Tai, WP
    Kim, KC
    Kim, SH
    Suh, SJ
    Kim, YS
    JOURNAL OF CRYSTAL GROWTH, 2005, 277 (1-4) : 352 - 358
  • [37] Microstructure and properties of Al-doped ZnO thin films by nonreactive DC magnetron sputtering at room temperature following rapid thermal annealing
    Wang, Hua
    Xu, Jiwen
    Ren, Mingfang
    Yang, Ling
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2010, 21 (01) : 33 - 37
  • [38] Influence of H2 introduction on properties in Al-doped ZnO thin films prepared by RF magnetron sputtering at room temperature
    D. L. Zhu
    H. F. Xiang
    P. J. Cao
    F. Jia
    W. J. Liu
    S. Han
    X. C. Ma
    Y. M. Lu
    Journal of Materials Science: Materials in Electronics, 2013, 24 : 1966 - 1969
  • [39] Microstructure and properties of Al-doped ZnO thin films by nonreactive DC magnetron sputtering at room temperature following rapid thermal annealing
    Hua Wang
    Jiwen Xu
    Mingfang Ren
    Ling Yang
    Journal of Materials Science: Materials in Electronics, 2010, 21 : 33 - 37
  • [40] Influence of H2 introduction on properties in Al-doped ZnO thin films prepared by RF magnetron sputtering at room temperature
    Zhu, D. L.
    Xiang, H. F.
    Cao, P. J.
    Jia, F.
    Liu, W. J.
    Han, S.
    Ma, X. C.
    Lu, Y. M.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (06) : 1966 - 1969