Direct tunneling gate current of MOSFET and its impact on CMOS logic circuit

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机构：
[1] [1,Tang, Dongfeng
[2] Zhang, Ping
[3] Long, Zhilin
[4] Hu, Shigang
[5] Wu, Xiaofeng
来源：
Tang, D. (dftang@hnust.edu.cn) | 1600年 / Central South University of Technology卷 / 44期
关键词：
CMOS integrated circuits - Integrated circuit manufacture - Metals - Leakage currents - Metallic compounds - Logic circuits - Oxide semiconductors - SPICE - MOS devices - Dielectric devices - Gates (transistor) - Timing circuits - Computer circuits - Electric breakdown;
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