Direct tunneling gate current of MOSFET and its impact on CMOS logic circuit

被引：0
|
作者：
机构：
[1] [1,Tang, Dongfeng
[2] Zhang, Ping
[3] Long, Zhilin
[4] Hu, Shigang
[5] Wu, Xiaofeng
来源：
Tang, D. (dftang@hnust.edu.cn) | 1600年 / Central South University of Technology卷 / 44期
关键词：
CMOS integrated circuits - Integrated circuit manufacture - Metals - Leakage currents - Metallic compounds - Logic circuits - Oxide semiconductors - SPICE - MOS devices - Dielectric devices - Gates (transistor) - Timing circuits - Computer circuits - Electric breakdown;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Direct Tunneling gate current in deep submicron MOSFETs
    Zaman, S
    Haque, A
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 742 - 745
  • [22] 1.5 nm direct-tunneling gate oxide Si MOSFET's
    Momose, HS
    Ono, M
    Yoshitomi, T
    Ohguro, T
    Nakamura, S
    Saito, M
    Iwai, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (08) : 1233 - 1242
  • [23] On the tunneling component of charge pumping current in ultrathin gate oxide MOSFET's
    Masson, P
    Autran, JL
    Brini, J
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (02) : 92 - 94
  • [24] Characterization of tunneling current and breakdown voltage of advanced CMOS gate oxide
    Hooi, YY
    Yaacob, II
    Said, SM
    Keating, RA
    2004 IEEE International Conference on Semiconductor Electronics, Proceedings, 2004, : 193 - 198
  • [25] Operation speed consideration of resonant tunneling logic gate based on circuit simulation
    Ohno, Y
    Kishimoto, S
    Mizutani, T
    Maezawa, K
    IEICE TRANSACTIONS ON ELECTRONICS, 1996, E79C (11) : 1530 - 1536
  • [26] Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
    Kaczer, B
    Degraeve, R
    Rasras, M
    Van de Mieroop, K
    Roussel, PJ
    Groeseneken, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (03) : 500 - 506
  • [27] Analytical subthreshold current model of the dual-material tri-gate (DMTG) MOSFET and its application for subthreshold logic gate
    Liu, Wentao
    Chiang, Te-Kuang
    Yan, Yan
    Liou, Juin J.
    ENGINEERING RESEARCH EXPRESS, 2022, 4 (04):
  • [28] Impact of gate-leakage currents on CMOS circuit performance
    Marras, A
    De Munari, I
    Vescovi, D
    Ciampolini, P
    2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, 2004, : 653 - 656
  • [29] Impact of gate-leakage currents on CMOS circuit performance
    Marras, A
    De Munari, I
    Vescovi, D
    Ciampolini, P
    MICROELECTRONICS RELIABILITY, 2005, 45 (3-4) : 499 - 506
  • [30] Extracting a Logic Gate Network from a Transistor-Level CMOS Circuit
    Cheremisinov D.I.
    Cheremisinova L.D.
    Russian Microelectronics, 2019, 48 (03) : 187 - 196
12345