Thermal analysis of InGaN/GaN multiple quantum well light emitting diodes with different mesa sizes

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Department of Electronic and Radio Engineering, Kyung Hee University, Seocheon-Dong, Giheung-Gu, Yongin, Gyeonggi-Do 446-701, Korea, Republic of [1 ]
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Jpn. J. Appl. Phys. | 1600年 / 4 PART 2卷
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摘要：
Junction temperature
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