Thermal analysis of InGaN/GaN multiple quantum well light emitting diodes with different mesa sizes

被引:0
|
作者
Department of Electronic and Radio Engineering, Kyung Hee University, Seocheon-Dong, Giheung-Gu, Yongin, Gyeonggi-Do 446-701, Korea, Republic of [1 ]
机构
来源
Jpn. J. Appl. Phys. | 1600年 / 4 PART 2卷
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Junction temperature
引用
收藏
相关论文
共 50 条
  • [21] InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
    T. C. Wen
    S. J. Chang
    Y. K. Su
    L. W. Wu
    C. H. Kuo
    W. C. Lai
    J. K. Sheu
    T. Y. Tsai
    Journal of Electronic Materials, 2003, 32 : 419 - 422
  • [22] Influence of multiple quantum well number on modulation bandwidth of InGaN/GaN light-emitting diodes
    Shaohua Cai
    Dunnian Wang
    Ni Zeng
    Kai Li
    Qibao Wu
    Yi’an Yin
    Journal of Optics, 2021, 50 : 83 - 89
  • [23] Influence of defects on current transport in GaN/InGaN multiple quantum well light-emitting diodes
    Cao, XA
    Stokes, EB
    LeBoeuf, SF
    Sandvik, PM
    Kretchmer, J
    Walker, D
    MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, 2002, 722 : 65 - 70
  • [24] Thermal Analysis of GaN-Based Light Emitting Diodes With Different Chip Sizes
    Yang, Lianqiao
    Hu, Jianzheng
    Kim, Lan
    Shin, Moo Whan
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (03) : 571 - 575
  • [25] Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes
    Wang, Cheng-Liang
    Tsai, Ming-Chang
    Gong, Jyh-Rong
    Liao, Wei-Tsai
    Lin, Ping-Yuan
    Yen, Kuo-Yi
    Chang, Chia-Chi
    Lin, Hsin-Yueh
    Hwang, Shen-Kwang
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 138 (02): : 180 - 183
  • [26] Alleviation of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal quantum barriers
    Kim, Sang-Jo
    Lee, Kwang Jae
    Park, Seong-Ju
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (25)
  • [27] Simulation of InGaN/GaN multiple quantum well light-emitting diodes with Quantum Dot electrical and optical effects
    Xia, C. S.
    Lu, W.
    Li, Z. M. Simon
    Li, Z. Q.
    NUSOD '06: PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, 2006, : 15 - +
  • [28] Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry
    Guo, X
    Li, YL
    Schubert, EF
    APPLIED PHYSICS LETTERS, 2001, 79 (13) : 1936 - 1938
  • [29] Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
    Li, Y.-L.
    Huang, R.
    Lai, Y.-H.
    APPLIED PHYSICS LETTERS, 2007, 91 (18)
  • [30] Electroluminescence phenomena in InGaN/GaN multiple quantum well light-emitting diodes with electron tunneling layer
    Nee, Tzer-En
    Wang, Jen-Cheng
    Chen, Hui-Yui
    Chen, Wan-Yi
    Cheng, Kung-Yu
    Shen, Hui-Tang
    Wu, Ya-Fen
    Jiang, Joe-Air
    Fan, Ping-Lin
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (09) : 7148 - 7151