共 50 条
- [31] EUV resist simulation based on process parameters of pattern formation reaction EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY V, 2014, 9048
- [32] Simulating the effects of bake process parameters on resist thermal reflow 24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2, 2004, 5567 : 1228 - 1239
- [33] Ultrathin resist pattern transfer process by filling mask material in the resist pattern JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (6B): : 3928 - 3932
- [34] Ultrathin resist pattern transfer process by filling mask material in the resist pattern Kato, H. (hir-kato@amc.toshiba.co.jp), 1600, Japan Society of Applied Physics (42):
- [35] Optimization of resist parameters to improve the profile and process window of the contact pattern in advanced node JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2016, 15 (04):
- [36] Contact hole filling by Cu reflow self-sputtering ELECTROCHEMISTRY, 1999, 67 (11) : 1046 - 1050
- [37] Ultralow k1 oxide contact hole formation and metal filling using resist contact hole pattern by double line and space formation method JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2008, 7 (04):
- [38] LWR reduction in ArF resist pattern by resist smoothing process ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U1481 - U1489
- [39] Model-based optical proximity correction for resist reflow process JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6B): : 5440 - 5444