Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing

被引：0
|
作者：
Kobayashi, Takuma [1 ]
Maeda, Kensei [1 ]
Hara, Masahiro [1 ]
Nozaki, Mikito [1 ]
Watanabe, Heiji [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
来源：
APPLIED PHYSICS LETTERS | 2025年 / 126卷 / 01期
关键词：
RECENT PROGRESS; BETA-GA2O3; CAPACITORS;
D O I：
10.1063/5.0245289
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the effect of post-deposition annealing on the electrical characteristics of SiO2/beta-Ga2O3(001) MOS structures. While oxygen annealing effectively improves the interface properties, it induces acceptor defects in Ga2O3, leading to a decrease in net donor density. With the combination of oxygen and nitrogen annealing, carrier compensation was suppressed, and a low interface state density of about 1 x 10(11) cm(-2) eV(-1) was obtained near the conduction band edge of Ga2O3. High immunity against positive gate bias stress was also confirmed.
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页数：4
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