Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing

被引：0
|
作者：
Kobayashi, Takuma [1 ]
Maeda, Kensei [1 ]
Hara, Masahiro [1 ]
Nozaki, Mikito [1 ]
Watanabe, Heiji [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
来源：
APPLIED PHYSICS LETTERS | 2025年 / 126卷 / 01期
关键词：
RECENT PROGRESS; BETA-GA2O3; CAPACITORS;
D O I：
10.1063/5.0245289
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the effect of post-deposition annealing on the electrical characteristics of SiO2/beta-Ga2O3(001) MOS structures. While oxygen annealing effectively improves the interface properties, it induces acceptor defects in Ga2O3, leading to a decrease in net donor density. With the combination of oxygen and nitrogen annealing, carrier compensation was suppressed, and a low interface state density of about 1 x 10(11) cm(-2) eV(-1) was obtained near the conduction band edge of Ga2O3. High immunity against positive gate bias stress was also confirmed.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] The formation and role of the SiO2 oxidation layer in the 4H-SiC/β-Ga2O3 interface
    Zhu, Naxin
    Ma, Kaichuang
    Xue, Xiangyi
    Su, Jie
    APPLIED SURFACE SCIENCE, 2022, 581
  • [22] Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks
    Taube, Andrzej
    Mroczynski, Robert
    Korwin-Mikke, Katarzyna
    Gieraltowska, Sylwia
    Szmidt, Jan
    Piotrowska, Anna
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2012, 177 (15): : 1281 - 1285
  • [23] Preparation of high-quality CuGa2O4 film via annealing process of Cu/β-Ga2O3
    Shi, Jianjun
    Liang, Hongwei
    Xia, Xiaochuan
    Li, Zhuo
    Long, Ze
    Zhang, Heqiu
    Liu, Yang
    JOURNAL OF MATERIALS SCIENCE, 2019, 54 (16) : 11111 - 11116
  • [24] Deep UV-assisted capacitance-voltage characterization of post-deposition annealed Al2O3/β-Ga2O3 (001) MOSCAPs
    Jian, Zhe
    Mohanty, Subhajit
    Ahmadi, Elaheh
    APPLIED PHYSICS LETTERS, 2020, 116 (24)
  • [25] Effects of post-deposition annealing on chemical composition of SiNx film in SiO2/SiNx/SiO2/Si stacked structure
    Sakata, Tomohiro
    Ogawa, Shingo
    Inoue, Keiko
    Shimizu, Yumiko
    Tanahashi, Yusaku
    SURFACE AND INTERFACE ANALYSIS, 2022, 54 (06) : 661 - 666
  • [26] Preparation of high-quality CuGa2O4 film via annealing process of Cu/β-Ga2O3
    Jianjun Shi
    Hongwei Liang
    Xiaochuan Xia
    Zhuo Li
    Ze Long
    Heqiu Zhang
    Yang Liu
    Journal of Materials Science, 2019, 54 : 11111 - 11116
  • [27] Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing
    Hiroshige, Yasuo
    Higashi, Seiichiro
    Matsumoto, Kazuya
    Miyazaki, Seiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (08)
  • [28] Fabrication of branched β-Ga2O3 nanowires by post deposition annealing with Au seeds
    Lee, Su Yong
    Lee, Miseon
    Kang, Hyon Chol
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (09)
  • [29] Analytical electron microscopy of ((2)over-bar01) β-Ga2O3/SiO2 and ((2)over-bar01) β-Ga2O3/Al2O3 interface structures in MOS capacitors
    Klingshirn, Christopher J.
    Jayawardena, Asanka
    Dhar, Sarit
    Ramamurthy, Rahul P.
    Morisette, Dallas
    Zheleva, Tsvetanka
    Lelis, Aivars
    Salamanca-Riba, Lourdes G.
    JOURNAL OF APPLIED PHYSICS, 2021, 129 (19)
  • [30] Influence of post-deposition annealing on the microstructure and properties of Ga2O3:Mn thin films deposited by RF planar magnetron sputtering
    Kim, Joo Han
    Yoon, Kyung Ho
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 (09) : 879 - 884
12345