Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing

被引：3

作者：

Takahara, Motoki ^{[1
]}

Funasaki, Suguru ^{[1
]}

Kudou, Jyun ^{[1
]}

Tsunoda, Isao ^{[1
]}

Takakura, Kenichiro ^{[1
]}

Ohyama, Hidenori ^{[1
]}

Nakashima, Toshiyuki ^{[2
]}

Shibuya, Mutsuo ^{[3
]}

Murakami, Katsuya ^{[4
]}

Simoen, Eddy ^{[5
]}

Claeys, Cor ^{[6
]}

机构：

[1] Kumamoto Natl Coll Technol, 2659-2 Suya, Kumamoto 8611102, Japan

[2] Chuo Denshi Kogyo Co Ltd, Tokyo 1540004, Japan

[3] Echo Mother, Kumamoto 8612401, Japan

[4] Japan Gas Chemi, Kumamoto 8612403, Japan

[5] IMEC, B-3001 Louvain, Belgium

[6] Katholieke Univ Leuven, Dept EE, B-3001 Louvain, Belgium

来源：

DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷

关键词：

Gallium oxide; Transparent conducting oxide; Impurity doping; Sputtering; EDX; XRD; SEM; THIN-FILMS; OPTICAL-ABSORPTION;

D O I：

10.4028/www.scientific.net/MSF.725.273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the purpose of improving the crystalline quality of undoped and Si-doped beta-Ga2O3 films, high-temperature annealing at 900 degrees C was performed. The crystalline quality of the films has been investigated using scanning electron microscopy and X-ray diffraction. Also the conductivity of the films is compared before and after the annealing. After the 900 degrees C annealing, the XRD peak intensity corresponding to beta-Ga2O3 is increased. This result indicates that the crystalline quality improves by the high-temperature annealing.

引用

页码：273 / +

页数：2

共 50 条

[1] Evolution of β-Ga2O3 to γ-Ga2O3 solid-solution epitaxial films after high-temperature annealing
Jiang, Kunyao
Tang, Jingyu
Xu, Chengchao
Xiao, Kelly
Davis, Robert F.
Porter, Lisa M.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (06):
[2] Ga2O3 thin films for high-temperature gas sensors
Ogita, M.
Saika, N.
Nakanishi, Y.
Hatanaka, Y.
[J]. Applied Surface Science, 1999, 142 (01): : 188 - 191
[3] Ga2O3 thin films for high-temperature gas sensors
Ogita, M
Saika, N
Nakanishi, Y
Hatanaka, Y
[J]. APPLIED SURFACE SCIENCE, 1999, 142 (1-4) : 188 - 191
[4] Effect of annealing temperature of Ga2O3/V films on synthesizing β-Ga2O3 nanorods
Yang, Zhaozhu
Xue, Chengshan
Zhuang, Huizhao
Wang, Gongtang
Chen, Jinhua
Li, Hong
Qin, Lixia
Zhang, Dongdong
Huang, Yinglong
[J]. SOLID STATE COMMUNICATIONS, 2008, 148 (9-10) : 480 - 483
[5] Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition
Lee, Hansol
Kim, Soyoon
Lee, Jungbok
Ahn, Hyungsoo
Kim, Kyounghwa
Yang, Min
[J]. JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2021, 31 (01): : 1 - 7
[6] β-Ga2O3: a potential high-temperature thermoelectric material
Ning, Suiting
Huang, Shan
Zhang, Ziye
Zhao, Bin
Zhang, Renqi
Qi, Ning
Chen, Zhiquan
[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (19) : 12052 - 12062
[7] Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements
Takakura, K.
Koga, D.
Ohyama, H.
Rafi, J. M.
Kayamoto, Y.
Shibuya, M.
Yamamoto, H.
Vanhellemont, J.
[J]. PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4854 - 4857
[8] The effect of high-temperature annealing on the properties of bulk β-Ga2O3 obtained in different growth atmospheres
Spiridonov, V.A.
Panov, D.I.
Ivanov, A.Yu.
Bauman, D.A.
Romanov, A.E.
[J]. Materials Physics and Mechanics, 2024, 52 (03): : 80 - 85
[9] Ga2O3(Sn) Oxides for High-Temperature Gas Sensors
Vorobyeva, Nataliya
Rumyantseva, Marina
Platonov, Vadim
Filatova, Darya
Chizhov, Artem
Marikutsa, Artem
Bozhev, Ivan
Gaskov, Alexander
[J]. NANOMATERIALS, 2021, 11 (11)
[10] Direct conversion of β-Ga2O3 thin films to β-Ga2O3 nanowires by annealing in a hydrogen atmosphere
Cha, Su Yeon
Ahn, Byeong-Gon
Kang, Hyon Chol
Lee, Su Yong
Noh, Do Young
[J]. CERAMICS INTERNATIONAL, 2018, 44 (14) : 16470 - 16474

← 1 2 3 4 5 →