Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon

被引：0
|
作者：
Zeng, Yuheng [1 ]
Ma, Xiangyang [1 ]
Tian, Daxi [1 ,2 ]
Wang, Weiyan [1 ]
Gong, Longfei [2 ]
Yang, Deren [1 ]
Que, Duanlin [1 ]
机构：
[1] State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
[2] Ningbo QL Electronics Co., Ltd., Gangdong Road, Ningbo Free Trade Zone, Ningbo 315800, China
来源：
Journal of Applied Physics | 2009年 / 105卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Nucleation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Effect of Rapid Thermal Process on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon Wafer
    Li, Chunlong
    Ma, Xiangyang
    Xu, Jin
    Yu, Xuegong
    Yang, Deren
    Que, Duanlin
    Yang, D. (mseyang@dial.zju.edu.cn), 1600, Japan Society of Applied Physics (42): : 7290 - 7291
  • [42] Defect behavior during growth of heavily phosphorus-doped Czochralski silicon crystals. I. Experimental study
    Hourai, Masataka
    Narushima, Yasuhito
    Torigoe, Kazuhisa
    Nonaka, Naoya
    Koga, Koutaro
    Ono, Toshiaki
    Horie, Hiroshi
    Sueoka, Koji
    JOURNAL OF APPLIED PHYSICS, 2024, 136 (05)
  • [43] Immobilization of dislocations by oxygen precipitates in Czochralski silicon: Feasibility of precipitation strengthening mechanism
    Zeng, Zhidan
    Chen, Jiahe
    Zeng, Yuheng
    Ma, Xiangyang
    Yang, Deren
    JOURNAL OF CRYSTAL GROWTH, 2011, 324 (01) : 93 - 97
  • [44] Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing (vol 311, pg 3273, 2009)
    Zeng, Yuheng
    Chen, Jiahe
    Ma, Miangyang
    Wang, Weiyan
    Yang, Deren
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (05) : 734 - 734
  • [45] Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon
    Rougieux, Fiacre E.
    Nguyen, Hieu T.
    Macdonald, D. H.
    Mitchell, Bernhard
    Falster, Robert
    IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 7 (03): : 735 - 740
  • [46] Oxygen precipitation behavior and its influence on phosphorus gettering in Czochralski silicon
    Cun, Zhiyong
    Jin, Qinglin
    Li, Shaoyuan
    JOURNAL OF CRYSTAL GROWTH, 2024, 648
  • [47] ANOMALOUS OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON
    LIN, W
    OATES, AS
    APPLIED PHYSICS LETTERS, 1990, 56 (02) : 128 - 130
  • [48] Oxygen precipitation behavior in heavily arsenic doped silicon crystals
    Haringer, Stephan
    Gambar, Daniela
    Porrini, Maria
    JOURNAL OF CRYSTAL GROWTH, 2017, 457 : 325 - 330
  • [49] OPTICAL AND ELECTRICAL-PROPERTIES OF HEAVILY PHOSPHORUS-DOPED EPITAXIAL SILICON LAYERS
    LUBBERTS, G
    BURKEY, BC
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (03) : 760 - 763
  • [50] Oxygen diffusion and precipitation in Czochralski silicon
    Newman, RC
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (25) : R335 - R365
12345