Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon

被引：0
|
作者：
Zeng, Yuheng [1 ]
Ma, Xiangyang [1 ]
Tian, Daxi [1 ,2 ]
Wang, Weiyan [1 ]
Gong, Longfei [2 ]
Yang, Deren [1 ]
Que, Duanlin [1 ]
机构：
[1] State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
[2] Ningbo QL Electronics Co., Ltd., Gangdong Road, Ningbo Free Trade Zone, Ningbo 315800, China
来源：
Journal of Applied Physics | 2009年 / 105卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Nucleation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
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