GRAIN-GROWTH PHENOMENA OF HEAVILY PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON

被引：0

作者：

WADA, V ^{[1
]}

NISHIMATSU, S ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,HITACHI,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C145 / C145

页数：1

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