Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD

被引：5
|
作者：
National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [1 ]
机构：
来源：
Chin. Phys. | 2006年 / 5卷 / 1114-1119期
关键词：
20;
D O I：
10.1088/1009-1963/15/5/042
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] InAs quantum dots grown on nonconventionally oriented GaAs substrates
    Universita degli Studi di Milano, Milano, Italy
    J Cryst Growth, 1 (126-132):
  • [32] Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates
    Astakhov, GV
    Kochereshko, VP
    Vasil'ev, DG
    Evtikhiev, VP
    Tokranov, VE
    Kudryashov, IV
    Mikhailov, GV
    SEMICONDUCTORS, 1999, 33 (09) : 988 - 990
  • [33] InAs quantum dots grown on nonconventionally oriented GaAs substrates
    Fortina, SC
    Sanguinetti, S
    Grilli, E
    Guzzi, M
    Henini, M
    Polimeni, A
    Eaves, L
    JOURNAL OF CRYSTAL GROWTH, 1998, 187 (01) : 126 - 132
  • [34] Dependence of the InAs size distribution on the growth times for vertically stacked InAs/GaAs quantum dots
    Lee, HS
    Lee, JY
    Lee, DU
    Choo, DC
    Kim, TW
    Kim, MD
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (04) : 483 - 486
  • [35] Effect of boron on the surface and optical properties for (B) InAs/GaAs self-assembled quantum dots grown by MOCVD
    Wang, Pengyu
    Wang, Qi
    Guo, Xin
    Jia, Zhigang
    Li, Tianhe
    Ren, Xiaomin
    Cai, Shiwei
    2011 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE AND EXHIBITION (ACP), 2012,
  • [36] Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD
    Wang, Pengyu
    Wang, Qi
    Guo, Xin
    Jia, Zhigang
    Li, Tianhe
    Ren, Xiaomin
    Cai, Shiwei
    OPTOELECTRONIC MATERIALS AND DEVICES VI, 2011, 8308
  • [37] Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy
    Weir, Nicholas
    Yao, Ruizhe
    Lee, Chi-Sen
    Guo, Wei
    JOURNAL OF CRYSTAL GROWTH, 2016, 451 : 79 - 82
  • [38] InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates
    Guo, SP
    Shen, A
    Ohno, Y
    Ohno, H
    PHYSICA E, 1998, 2 (1-4): : 672 - 677
  • [39] Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution
    Guo, ZS
    Wang, HL
    Ning, D
    Feng, SL
    CHINESE PHYSICS, 2000, 9 (05): : 384 - 388
  • [40] InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates
    Guo, S.P.
    Shen, A.
    Ohno, Y.
    Ohno, H.
    Physica E: Low-Dimensional Systems and Nanostructures, 1998, 2 (1-4): : 672 - 677
12345