Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD

被引：5
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作者：
National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [1 ]
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来源：
Chin. Phys. | 2006年 / 5卷 / 1114-1119期
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20;
D O I：
10.1088/1009-1963/15/5/042
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