The effect of growth temperature on InAs quantum dots grown by MOCVD

被引：0
|
作者：
Li, Tianhe [1 ]
Guo, Xin [1 ]
Wang, Qi [1 ]
Wang, Pengyu [1 ]
Jia, Zhigang [1 ]
Ren, Xiaomin [1 ]
Huang, Yongqing [1 ]
Cai, Shiwei [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
来源：
2011 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE AND EXHIBITION (ACP) | 2012年
基金：
中国国家自然科学基金;
关键词：
InAs QDs; MOCVD; AFM; PL; ASSEMBLED ISLAND FORMATION; (001)GAAS; EPILAYERS; BXGA1-XAS; KINETICS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of growth temperature on InAs QDs grown by metal-organic chemical vapor deposition (MOCVD) was investigated in detail. Growth temperature affects InAs QDs in three ways, including the reconstruction mode of new InAs crystal faces, the migration length of adatoms, band gaps of InAs QDs, and the interaction among three aspects was studied. The variation of density, size and wavelength was experimentally demonstrated. The high density of 5.2x 10(10)cm(-2) was obtained. The room temperature wavelength of InAs/GaAs QDs using GaAs as capping layer reached 1240nm.
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页数：7
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