Effect of boron on the surface and optical properties for (B) InAs/GaAs self-assembled quantum dots grown by MOCVD

被引：0
|
作者：
Wang, Pengyu [1 ]
Wang, Qi [1 ]
Guo, Xin [1 ]
Jia, Zhigang [1 ]
Li, Tianhe [1 ]
Ren, Xiaomin [1 ]
Cai, Shiwei [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
来源：
2011 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE AND EXHIBITION (ACP) | 2012年
基金：
中国国家自然科学基金;
关键词：
Boron incorporation; compressive strain; morphology; PL spectra; SEGREGATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated strain-reduced InAs quantum dots (QDs) by boron incorporation grown on GaAs(100) substrate. The size of uncapped InAs QDs was increased with boron incorporation. The effect of boron on the PL spectra of InAs QDs capped by an InGaAs strain-reducing layer wasn't obvious. However, when boron atoms were incorporated in InAs QDs capped by a GaAs overgrown layer, the PL intensity was strongly enhanced, and the PL peak shifted towards a longer wavelength. It was found that the incorporation of boron atoms within the InAs QDs could drastically reduce the In/Ga intermixing effects during capping coverage.
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页数：6
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