Electronic properties of (Ga,Mn)N thin films with high Mn content

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作者：
Granville, S. [1 ,5 ]
Ruck, B.J. [1 ]
Preston, A.R.H. [1 ]
Stewart, T. [1 ]
Budde, F. [1 ]
Trodahl, H.J. [1 ]
Bittar, A. [2 ]
Downes, J.E. [3 ]
Ridgway, M. [4 ]
机构：
[1] MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand
[2] Industrial Research Ltd., P.O. Box 31310, Lower Hutt 5040, New Zealand
[3] Department of Physics, Macquarie University, NSW 2109, Australia
[4] Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200, Australia
[5] IPN, EPFL, Lausanne, Switzerland
来源：
Journal of Applied Physics | 2008年 / 104卷 / 10期
关键词：
Conduction bands - X ray spectroscopy - Thin films - Electronic properties - Manganese - III-V semiconductors;
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