Electronic properties of (Ga,Mn)N thin films with high Mn content

被引：0

作者：

Granville, S. ^{[1
,5
]}

Ruck, B.J. ^{[1
]}

Preston, A.R.H. ^{[1
]}

Stewart, T. ^{[1
]}

Budde, F. ^{[1
]}

Trodahl, H.J. ^{[1
]}

Bittar, A. ^{[2
]}

Downes, J.E. ^{[3
]}

Ridgway, M. ^{[4
]}

机构：

[1] MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand

[2] Industrial Research Ltd., P.O. Box 31310, Lower Hutt 5040, New Zealand

[3] Department of Physics, Macquarie University, NSW 2109, Australia

[4] Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200, Australia

[5] IPN, EPFL, Lausanne, Switzerland

来源：

Journal of Applied Physics | 2008年 / 104卷 / 10期

关键词：

Conduction bands - X ray spectroscopy - Thin films - Electronic properties - Manganese - III-V semiconductors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

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