The effect of Mn disorder on the electronic and magnetic properties of (Ga, Mn)As: A first principles study

被引：5

作者：

Guo, XG ^{[1
]}

Chen, XS ^{[1
]}

Sun, YL ^{[1
]}

Zhou, XH ^{[1
]}

Sun, LZ ^{[1
]}

Wei, L ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

ACTA PHYSICA SINICA | 2004年 / 53卷 / 05期

关键词：

dilute magnetic semiconductor; (Ga; Mn)As; density functional theory;

D O I：

10.7498/aps.53.1516

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of Mn disorder on the electronic and magnetic proper-ties of diluted magnetic semiconductor (Ga, Mn) As was studied by using pseudopotential plane-wave method, based on the density functional theory. Our numerical results show that the substituting Mn atoms are ferromagnetically coupled. A local crystal structural distortion induced by Mn doping was found. The distribution disorder of the Mn atoms makes the holes stay in stronger localization states. The total-energy calculations indicate that the Mn atoms in (Ga, Mn) As tend to form Mn clusters.

引用

页码：1516 / 1519

页数：4

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