A model for the thermal degradation of metal/ (p-GaN) interface in GaN-based light emitting diodes

被引：0
|
作者：
Meneghini, M. [1 ]
Rigutti, L. [2 ]
Trevisanello, L.R. [1 ]
Cavallini, A. [2 ]
Meneghesso, G. [1 ]
Zanoni, E. [1 ]
机构：
[1] Department of Electrical Engineering, University of Padova, via Gradenigo 6A, 35131 Padova, Italy
[2] CNISM, Department of Physics, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
来源：
Journal of Applied Physics | 2008年 / 103卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] Effect of p-GaN layer on the properties of InGaN/GaN green light-emitting diodes
    Wang, Wenliang
    Liu, Zuolian
    Zhou, Shizhong
    Yang, Weijia
    Lin, Yunhao
    Wang, Haiyan
    Lin, Zhiting
    Qian, Huirong
    Li, Guoqiang
    JOURNAL OF MATERIALS RESEARCH, 2015, 30 (04) : 477 - 483
  • [32] High brightness GaN-based light emitting diodes using ITO/n+-InGaN/InGaN superlattice/n+-GaN/p-GaN tunneling junction
    Lee, SH
    Son, HK
    Kim, SJ
    Jeong, HH
    Jang, JS
    Jung, JJ
    Lee, SH
    Kim, TH
    Yu, YM
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (12): : 2726 - 2729
  • [33] Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure
    付丙磊
    刘乃鑫
    刘喆
    李晋闽
    王军喜
    Journal of Semiconductors, 2014, 35 (11) : 74 - 77
  • [34] Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure
    Fu Binglei
    Liu Naixin
    Liu Zhe
    Li Jinmin
    Wang Junxi
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (11)
  • [35] The fabrication of GaN-based nanopillar light-emitting diodes
    Zhu, Jihong
    Wang, Liangji
    Zhang, Shuming
    Wang, Hui
    Zhao, Degang
    Zhu, Jianjun
    Liu, Zongshun
    Jiang, Desheng
    Yang, Hui
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)
  • [36] Brightness of blue GaN-based light-emitting diodes
    Grushko, N. S.
    Lakalin, A. V.
    Solonin, A. P.
    INORGANIC MATERIALS, 2008, 44 (02) : 139 - 141
  • [37] Improvement of extraction efficiency for GaN-based light emitting diodes
    YanKuin Su
    ChunYuan Huang
    JianJhong Chen
    ChienChih Kao
    ChunFu Tsai
    Science China Technological Sciences, 2010, 53 : 322 - 325
  • [38] Recent Progress in GaN-Based Light-Emitting Diodes
    Jia, Haiqiang
    Guo, Liwei
    Wang, Wenxin
    Chen, Hong
    ADVANCED MATERIALS, 2009, 21 (45) : 4641 - 4646
  • [39] Improvement of extraction efficiency for GaN-based light emitting diodes
    SU YanKuin
    CHEN JianJhong
    KAO ChienChih
    TSAI ChunFu
    Science China(Technological Sciences), 2010, (02) : 322 - 325
  • [40] Improvement of extraction efficiency for GaN-based light emitting diodes
    Su YanKuin
    Huang ChunYuan
    Chen JianJhong
    Kao ChienChih
    Tsai ChunFu
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 53 (02) : 322 - 325
12345