A model for the thermal degradation of metal/ (p-GaN) interface in GaN-based light emitting diodes

被引：0

作者：

Meneghini, M. ^{[1
]}

Rigutti, L. ^{[2
]}

Trevisanello, L.R. ^{[1
]}

Cavallini, A. ^{[2
]}

Meneghesso, G. ^{[1
]}

Zanoni, E. ^{[1
]}

机构：

[1] Department of Electrical Engineering, University of Padova, via Gradenigo 6A, 35131 Padova, Italy

[2] CNISM, Department of Physics, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy

来源：

Journal of Applied Physics | 2008年 / 103卷 / 06期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

共 50 条

[21] Highly reflective Ti/Ag/Pt contacts to p-GaN for high-efficiency GaN-based light-emitting diodes
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju
561-756, Korea, Republic of
不详
712-749, Korea, Republic of
Jpn. J. Appl. Phys., 2
[22] Degradation behaviors of high power GaN-based blue light emitting diodes
钟灿涛
于彤军
颜建
陈志忠
张国义
Chinese Physics B, 2013, 22 (11) : 607 - 610
[23] GaN-based light emitting diodes with tunnel junctions
Takeuchi, T
Hasnain, G
Corzine, S
Hueschen, M
Schneider, RP
Kocot, C
Blomqvist, M
Chang, YL
Lefforge, D
Krames, MR
Cook, LW
Stockman, SA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (8B): : L861 - L863
[24] GaN-based microcavity polariton light emitting diodes
Lu, Tien-Chang
Lai, Ying-Yu
Huang, Si-Wei
Chen, Jun-Rong
Wu, Yung-Chi
Lin, Shiang-Chi
Wang, Shing-Chung
Yamamoto, Yoshihisa
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVI, 2012, 8278
[25] GaN-based light emitting diodes with white emission
Drizhuk, AG
Zaitsev, MV
Sidorov, VG
Sidorov, DV
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (11): : 23 - 25
[26] GaN-based single mirror light emitting diodes
Zellweger, C
Dorsaz, J
Carlin, JF
Bühlmann, HJ
Ilegems, M
Stanley, RP
COMPOUND SEMICONDUCTORS 2002, 2003, 174 : 419 - 422
[27] The fabrication of GaN-based light emitting diodes (LEDs)
Nguyen X.L.
Nguyen T.N.N.
Chau V.T.
Dang M.C.
Advances in Natural Sciences: Nanoscience and Nanotechnology, 2010, 1 (02)
[28] Thermal Analysis of GaN-Based Light Emitting Diodes With Different Chip Sizes
Yang, Lianqiao
Hu, Jianzheng
Kim, Lan
Shin, Moo Whan
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (03) : 571 - 575
[29] Structural and electrical properties of Pd/p-GaN contacts for GaN-based laser diodes
Norman-Reiner, Maria
Freier, Erik
Mogilatenko, Anna
Ostermay, Ina
Hoffmann, Veit
Szukiewicz, Rafal
Krueger, Olaf
Hommel, Detlef
Einfeldt, Sven
Weyers, Markus
Traenkle, Guenther
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020, 38 (03):
[30] Effect of p-GaN layer on the properties of InGaN/GaN green light-emitting diodes
Wenliang Wang
Zuolian Liu
Shizhong Zhou
Weijia Yang
Yunhao Lin
Haiyan Wang
Zhiting Lin
Huirong Qian
Guoqiang Li
Journal of Materials Research, 2015, 30 : 477 - 483

← 1 2 3 4 5 →