MBE fabrication of GaN-based light emitting diode on MOCVD grown GaN-on-Si template and application for optical MEMS

被引：0
|
作者：
Wakui, Masashi [1 ]
Ito, Ryousuke [1 ]
Hu, Fang-Ren [1 ]
Sameshima, Hidehisa [1 ]
Hane, Kazuhiro [1 ]
机构：
[1] Department of Nanomechanics, Tohoku University, 6-6-1 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
来源：
IEEJ Transactions on Sensors and Micromachines | 2009年 / 129卷 / 03期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Molecular beam epitaxy
引用
收藏
页码：77 / 80
相关论文
共 50 条
  • [41] GaN-Based Light Emitting Diodes with Two-Step Grown GaN Quantum Barriers
    Lam, Kin-Tak
    Lin, Wei-Heng
    Chang, Shoou-Jinn
    SCIENCE OF ADVANCED MATERIALS, 2016, 8 (07) : 1451 - 1453
  • [42] GaN on patterned silicon (GPS) technique for fabrication of GaN-based MEMS
    Yang, ZC
    Wang, RA
    Jia, S
    Wang, DL
    Zhang, BS
    Chen, KJ
    Lau, KM
    TRANSDUCERS '05, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2005, : 887 - 890
  • [43] Optical Improvement of GaN-Based Light Emitting Diodes by Interfacial Si Treatment in InGaN/GaN Quantum Well Structure
    Park, Sangjun
    Lee, Sangwon
    Yoo, Hongjae
    Choi, Joowon
    Lee, Sung-Nam
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (09)
  • [44] Fabrication and Characterization of GaN-based Light-emitting Diode (LED) with Triangle-type Structure
    Lee, Hwan Gi
    Seo, Jae Hwa
    Yoon, Young Jun
    Kim, Young Jae
    Kim, Jungjoon
    Cho, Seongjae
    Cho, Eou-Sik
    Bae, Jin-Hyuk
    Lee, Jung-Hee
    Kang, In Man
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2014, 599 (01) : 163 - 169
  • [45] Fabrication and characterization of gan-based blue light-emitting diode with electrodes formed by screen printing
    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka Univ, Yamadaoka, Suita
    565-0871, Japan
    不详
    536-8553, Japan
    不详
    536-0011, Japan
    不详
    538-0044, Japan
    不详
    660-0092, Japan
    Zairyo, 5 (414-416):
  • [46] GaN/AlGaN two-dimensional electron gas grown by ammonia-MBE on MOCVD GaN template
    Tang, H
    Webb, JB
    Rolfe, S
    Bardwell, JA
    Tomka, D
    Coleridge, P
    Ko, CH
    Su, YK
    Chang, SJ
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 234 (03): : 822 - 825
  • [47] Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate
    Wei Jingting
    Zhang Baijun
    Wang Gang
    CHINESE JOURNAL OF ELECTRONICS, 2016, 25 (04) : 672 - 677
  • [48] Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates
    Yang, Yibin
    Zhang, Lingxia
    Zhao, Yu
    CRYSTALS, 2020, 10 (09): : 1 - 8
  • [49] Fabrication and replication of micro-optical structures for growth of GaN-based light emitting diodes
    Gervinskas, G.
    Seniutinas, G.
    Vijayakumar, A.
    Bhattacharya, S.
    Jelmakas, E.
    Kadys, A.
    Tomasiunas, R.
    Juodkazis, S.
    MICRO/NANO MATERIALS, DEVICES, AND SYSTEMS, 2013, 8923
  • [50] Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate
    WEI Jingting
    ZHANG Baijun
    WANG Gang
    ChineseJournalofElectronics, 2016, 25 (04) : 672 - 677
12345