MBE fabrication of GaN-based light emitting diode on MOCVD grown GaN-on-Si template and application for optical MEMS

被引：0
|
作者：
Wakui, Masashi [1 ]
Ito, Ryousuke [1 ]
Hu, Fang-Ren [1 ]
Sameshima, Hidehisa [1 ]
Hane, Kazuhiro [1 ]
机构：
[1] Department of Nanomechanics, Tohoku University, 6-6-1 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
来源：
IEEJ Transactions on Sensors and Micromachines | 2009年 / 129卷 / 03期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Molecular beam epitaxy
引用
收藏
页码：77 / 80
相关论文
共 50 条
  • [21] GaN-based ultraviolet microdisk laser diode grown on Si
    Wang, Jin
    Feng, Meixin
    Zhou, Rui
    Sun, Qian
    Liu, Jianxun
    Huang, Yingnan
    Zhou, Yu
    Gao, Hongwei
    Zheng, Xinhe
    Ikeda, Masao
    Yang, Hui
    PHOTONICS RESEARCH, 2019, 7 (06) : B32 - B35
  • [22] GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
    Chen, Wen
    Feng, Meixin
    Tang, Yongjun
    Wang, Jian
    Liu, Jianxun
    Sun, Qian
    Gao, Xumin
    Wang, Yongjin
    Yang, Hui
    NANOMATERIALS, 2022, 12 (01)
  • [23] Optical and electrical improvements of semipolar (11-22) GaN-based light emitting diodes by Si doping of n-GaN template
    Lee, Jae-Hwan
    Han, Sang-Hyun
    Song, Ki-Ryong
    Lee, Sung-Nam
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 598 : 85 - 88
  • [24] Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD
    Tian, Pengfei
    Edwards, Paul R.
    Wallace, Michael J.
    Martin, Robert W.
    McKendry, Jonathan J. D.
    Gu, Erdan
    Dawson, Martin D.
    Qiu, Zhi-Jun
    Jia, Chuanyu
    Chen, Zhizhong
    Zhang, Guoyi
    Zheng, Lirong
    Liu, Ran
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (07)
  • [25] Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)
    Sillero, E.
    Lopez-Romero, D.
    Bengoechea, A.
    Sanchez-Garcia, M. A.
    Calle, F.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1974 - +
  • [26] Characteristics of GaN-based light emitting diode grown on circular convex patterned sapphire substrate
    Oh, Tae Su
    Lee, Yong Seok
    Jeong, Hyun
    Di Kim, Jan
    Se, Tae Hun
    Suh, Eun-Kyung
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 2, 2009, 6 (02): : 589 - +
  • [27] The fabrication of GaN-based nanopillar light-emitting diodes
    Zhu, Jihong
    Wang, Liangji
    Zhang, Shuming
    Wang, Hui
    Zhao, Degang
    Zhu, Jianjun
    Liu, Zongshun
    Jiang, Desheng
    Yang, Hui
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)
  • [28] Maskless Fabrication of GaN-Based Light-Emitting Diodes
    Guilhabert, B.
    Richardson, E.
    Massoubre, D.
    Gu, E.
    Watson, I. M.
    Dawson, M. D.
    2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY, 2010, : 649 - 650
  • [29] The design and fabrication of a GaN-based monolithic light-emitting diode array附视频
    詹腾
    张扬
    李璟
    马骏
    刘志强
    伊晓燕
    王国宏
    李晋闽
    Journal of Semiconductors, 2013, (09) : 82 - 85
  • [30] GaN-Based Light-Emitting Diodes on Electrochemically Etched n--GaN Template
    Lai, Wei-Chih
    Yen, Cheng-Hsiung
    Li, Jhen-Zih
    Yang, Ya-Yu
    Cheng, Hsyi-En
    Chang, Shoou-Jinn
    Li, Shuguang
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (15) : 1531 - 1534
12345