MBE fabrication of GaN-based light emitting diode on MOCVD grown GaN-on-Si template and application for optical MEMS

被引：0
|
作者：
Wakui, Masashi [1 ]
Ito, Ryousuke [1 ]
Hu, Fang-Ren [1 ]
Sameshima, Hidehisa [1 ]
Hane, Kazuhiro [1 ]
机构：
[1] Department of Nanomechanics, Tohoku University, 6-6-1 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
来源：
IEEJ Transactions on Sensors and Micromachines | 2009年 / 129卷 / 03期
关键词：
Compendex;
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暂无
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学科分类号：
摘要：
Molecular beam epitaxy
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页码：77 / 80
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