Mechanism of germanium plasma nitridation

被引：19

作者：

Sugawara, Takuya ^{[1
,2
]}

Sreenivasan, Raghavasimhan ^{[2
]}

McIntyre, Paul C. ^{[2
]}

机构：

[1] Tokyo Electron Ltd., Technology Development Center, Nirasaki, Yamanashi 407-0192, Japan

[2] Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305

来源：

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 2006年 / 24卷 / 05期

关键词：

Concentration (process) - Emission spectroscopy - Germanium compounds - Silicon - Substrates - Thin films - X ray photoelectron spectroscopy;

D O I：

10.1116/1.2348887

中图分类号：

学科分类号：

摘要：

The mechanisms of plasma nitridation of germanium (Ge) and silicon (Si) substrates are discussed based on plasma characteristics and oxynitride film properties. Optical emission spectroscopy (OES) study and x-ray photoelectron spectroscopy were utilized to characterize the plasma and film properties, respectively. In this study, high pressure (1.8 Torr) remote inductive coupled plasma and low pressure (2+ ion species acted as dominant reactive species. Using this process, germanium could be nitrided at low substrate temperature without hydrogen and high nitrogen concentration (∼22 at. %) GeON was obtained. © 2006 American Vacuum Society.

引用

页码：2439 / 2445

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