Mechanism of germanium plasma nitridation

被引：19

作者：

Sugawara, Takuya ^{[1
,2
]}

Sreenivasan, Raghavasimhan ^{[2
]}

McIntyre, Paul C. ^{[2
]}

机构：

[1] Tokyo Electron Ltd., Technology Development Center, Nirasaki, Yamanashi 407-0192, Japan

[2] Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305

来源：

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 2006年 / 24卷 / 05期

关键词：

Concentration (process) - Emission spectroscopy - Germanium compounds - Silicon - Substrates - Thin films - X ray photoelectron spectroscopy;

D O I：

10.1116/1.2348887

中图分类号：

学科分类号：

摘要：

The mechanisms of plasma nitridation of germanium (Ge) and silicon (Si) substrates are discussed based on plasma characteristics and oxynitride film properties. Optical emission spectroscopy (OES) study and x-ray photoelectron spectroscopy were utilized to characterize the plasma and film properties, respectively. In this study, high pressure (1.8 Torr) remote inductive coupled plasma and low pressure (2+ ion species acted as dominant reactive species. Using this process, germanium could be nitrided at low substrate temperature without hydrogen and high nitrogen concentration (∼22 at. %) GeON was obtained. © 2006 American Vacuum Society.

引用

页码：2439 / 2445

共 50 条

[21] NITRIDATION IN ELECTRIC-DISCHARGE PLASMA
KODYMOVA, J
CESKOSLOVENSKY CASOPIS PRO FYSIKU SEKCE A, 1979, 29 (04): : 402 - 403
[22] A study on the nitridation mechanism of silicon particles
Yasutomi, Y
Sawai, Y
Miyata, M
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1997, 105 (07) : 582 - 587
[23] THERMAL NITRIDATION OF SILICON IN NITROGEN PLASMA
NAKAMURA, H
KANEKO, M
MATSUMOTO, S
FUJITA, S
SASAKI, A
APPLIED PHYSICS LETTERS, 1983, 43 (07) : 691 - 693
[24] Effectiveness of nitridation of hafnium silicate dielectrics:: A comparison between thermal and plasma nitridation
O'Sullivan, Barry J.
Kaushik, Vidya S.
Everaert, J.-L.
Trojman, Lionel
Ragnarsson, Lars-Ake
Pantisano, Luigi
Rohr, Erika
DeGendt, Stefan
Heyns, Marc
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (07) : 1771 - 1775
[25] Accelerated nitridation and oxidation by plasma on polyethylene
Olayo, M. G.
Colin, E.
Cruz, G. J.
Morales, J.
Olayo, R.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2009, 48 (03):
[26] NITRIDATION OF SILICON IN A MULTIWAFER PLASMA SYSTEM
REISMAN, A
BERKENBLIT, M
RAY, AK
MERZ, CJ
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) : 505 - 521
[27] Thermal and plasma nitridation of GaSe crystal
Balitskii, OA
Savchyn, VP
Stakhira, PJ
Berchenko, NN
VACUUM, 2002, 67 (01) : 69 - 73
[28] Nitridation process and mechanism of Ti-6Al-4V particles by dc plasma spraying
Denoirjean, A
Lefort, P
Fauchais, P
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2003, 5 (22) : 5133 - 5138
[29] Diffusion barrier mechanism of extremely thin tungsten silicon nitride film formed by ECR plasma nitridation
Hirata, A
Machida, K
Maeyama, S
Watanabe, Y
Kyuragi, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B): : 1251 - 1255
[30] MECHANISM OF RAPID THERMAL NITRIDATION OF THIN OXIDES
SHIH, DK
JOSHI, AB
KWONG, DL
JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) : 5851 - 5855

← 1 2 3 4 5 →