Effect of plasma gases on insulating properties of low-temperature- deposited SiOCH films prepared by remote plasma-enhanced chemical vapor deposition

被引：0
|
作者：
Yamaoka, Keisuke [1 ]
Okada, Naomichi [1 ]
Yoshizako, Yuji [1 ]
Terai, Yoshikazu [1 ]
Fujiwara, Yasufumi [1 ]
机构：
[1] Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期
关键词：
Carbon-doped silicon oxide (SiOCH) films were deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS) at low temperatures (27-53 °C). The structural and insulating properties of the films deposited with Ar or N2 plasma were investigated. In the deposition with low plasma density and low substrate temperature; both plasmas produced films with high hydrocarbon (CHn) content. The films prepared using Ar plasma showed a low leakage current of 7 × 10 -10A/cm2 at 1 MV/cm due to the incorporation of CH n groups; while the films with high CHn content prepared using N2 plasma showed poor insulating properties. The deposition using N2 plasma formed films with a defective structure; resulting in a higher etch rate than that of the films deposited with Ar plasma. The deposition with the low-density plasma of inert Ar gas is suitable for the low-temperature deposition of SiOCH films with high resistivity. © 2007 The Japan Society of Applied Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：1997 / 2000
相关论文
共 50 条
  • [21] Structural and photo-luminescence properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced chemical vapor deposition
    Ali, Atif Mossad
    Inokuma, Takao
    Hasegawa, Seiichi
    APPLIED SURFACE SCIENCE, 2006, 253 (03) : 1198 - 1204
  • [22] Relationship between structural and optical properties in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition
    Milovzorov, D
    Inokuma, T
    Kurata, Y
    Hasegawa, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (10) : 3615 - 3620
  • [23] Relationship between structural and optical properties in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition
    Kanazawa Univ, Kanazawa, Japan
    J Electrochem Soc, 10 (3615-3620):
  • [24] Preparation of polycrystalline silicon films by plasma-enhanced chemical vapor deposition at low temperature
    Deng, Wan-Ting
    Wu, Ai-Min
    Zhang, Guang-Ying
    Qin, Fu-Wen
    Dong, Chuang
    Jiang, Xin
    Yuanzineng Kexue Jishu/Atomic Energy Science and Technology, 2007, 41 (SUPPL.): : 436 - 440
  • [25] Optical and chemical properties of polyterpenol thin films deposited via plasma-enhanced chemical vapor deposition
    Bazaka, Kateryna
    Jacob, Mohan V.
    Bowden, Bruce F.
    JOURNAL OF MATERIALS RESEARCH, 2011, 26 (08) : 1018 - 1025
  • [26] Low-temperature plasma-enhanced chemical vapor deposition of hard carbon films
    Vinogradov, AY
    Abramov, AS
    Orlov, KE
    Smirnov, AS
    VACUUM, 2004, 73 (01) : 131 - 135
  • [27] Optical and chemical properties of polyterpenol thin films deposited via plasma-enhanced chemical vapor deposition
    Kateryna Bazaka
    Mohan V. Jacob
    Bruce F. Bowden
    Journal of Materials Research, 2011, 26 : 1018 - 1025
  • [28] Influence of temperature on the hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition
    Wu, Jiung
    Cheng, Yi-Lung
    Shiau, Ming-Kai
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (06): : 1363 - 1365
  • [29] INFLUENCE OF TEMPERATURE ON THE PROPERTIES OF SICXNY-H FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    ZHANG, W
    ZHANG, KY
    WANG, BQ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 26 (2-3): : 133 - 140
  • [30] Structural and optical properties of nanocrystalline silicon films deposited by plasma-enhanced chemical vapor deposition
    Ali, AM
    Inokuma, T
    Kurata, Y
    Hasegawa, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (01): : 169 - 175
12345